PART |
Description |
Maker |
MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
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MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
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256KX18 128KX36 IS61NVP25618A IS61NLP12832B-200B2 |
128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM 128K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K X 36 ZBT SRAM, 2.6 ns, PQFP100 TQFP-100 128K X 36 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PBGA119 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PQFP100
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. Integrated Silicon Solu...
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GS840FH36AT-8I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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GSI Technology
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GS840H18AB-100I GS840H18AB-180 GS840H18AGT-100 GS8 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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GSI[GSI Technology]
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GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
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GSI Technology, Inc.
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IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
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INTEGRATED SILICON SOLUTION INC
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25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V 128K SPI serial CMOS EEPROM 2.5-6.0V SPI Serial EEPROM SPI串行EEPROM 128K/256K-BitSPISerialCMOSE2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 128K SPI serial CMOS EEPROM 1.8-6.0V 256K SPI serial CMOS EEPROM 2.5-6.0V 128K/256K-Bit SPI Serial CMOS E2PROM
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http:// STMicroelectronics N.V. Semtech, Corp. Abracon, Corp. CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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AB28F200BR-T80 A28F200BR-TB A28F200BR-B AB28F200BR |
2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY JT 42C 42#22 PIN RECP 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K X 16/ 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
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Intel Corp.
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KM681000AL-LPI-7L-L KM62256BLPI-85L KM681000ALPI-8 |
128K X 8 STANDARD SRAM, 70 ns, PDIP32 DIP-32 32K X 8 STANDARD SRAM, 85 ns, PDIP28 DIP-28 128K X 8 STANDARD SRAM, 85 ns, PDIP32 DIP-32 128K X 8 STANDARD SRAM, 80 ns, PDIP32 DIP-32 128K X 8 STANDARD SRAM, 100 ns, PDIP32 DIP-32 128K X 8 STANDARD SRAM, 80 ns, PDSO32 SOP-32 128K X 8 STANDARD SRAM, 45 ns, PDSO32 128K X 8 STANDARD SRAM, 45 ns, PDIP 32K X 8 STANDARD SRAM, 120 ns, PDIP28 256K X 16 STANDARD SRAM, 45 ns, PDSO 256K X 16 STANDARD SRAM, 70 ns, PDSO 64K X 8 STANDARD SRAM, 85 ns, PDSO32 32K X 8 STANDARD SRAM, 70 ns, PDSO32 64K X 16 STANDARD SRAM, 45 ns, PDSO40 256K X 16 STANDARD SRAM, 55 ns, PDSO40 64K X 16 STANDARD SRAM, 55 ns, PDSO 128K X 8 STANDARD SRAM, 85 ns, PDSO32
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Coilcraft, Inc.
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IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
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IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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